Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate

被引：10

作者：

Kamikawa, Takeshi ^{[1
]}

Gandrothula, Srinivas ^{[1
]}

Araki, Masahiro ^{[1
]}

Li, Hongjian ^{[1
,2
]}

Oliva, Valeria Bonito ^{[2
,3
,4
]}

Wu, Feng ^{[1
]}

Cohen, Daniel ^{[1
]}

Speck, James S. ^{[1
]}

Denbaars, Steven P. ^{[1
,2
]}

Nakamura, Shuji ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Univ Trieste, Dept Engn & Architecture, Via A Valerio 10, I-34127 Trieste, Italy

[4] Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany

来源：

OPTICS EXPRESS | 2019年 / 27卷 / 17期

关键词：

Adhesive tapes - Epitaxial lateral overgrowth - GaN substrate - Growth substrates - InGaN laser diodes - Lasing operation - Mechanical separation - Non-polar GaN;

D O I：

10.1364/OE.27.024717

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A nonpolar edge emitting thin film InGaN laser diode has been separated from its native substrate by mechanical tearing with adhesive tape, combining the benefits of Epitaxial Lateral Overgrowth (ELO) and cleavability of nonpolar GaN crystal. The essence of ELO is mainly to weakening strength between native substrate and the fabricated laser device on top of it. We report a 3 mm long laser bar removed from its native GaN substrate. We confirmed edge emitting lasing operation after cleaving facets on a separated thin bar. Threshold current density of the laser was measured to be as low as 2.15 kA/cm(2). (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.

引用

页码：24717 / 24723

页数：7

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