Improved thermal performance of AlGaN/GaN HEMTs by an optimized flip-chip design

被引:65
作者
Das, Jo [1 ]
Oprins, Herman
Ji, Hangfeng
Sarua, Andrei
Ruythooren, Wouter
Derluyn, Joff
Kuball, Martin
Germain, Marianne
Borghs, Gustaaf
机构
[1] Interuniv Microelect Ctr, B-3001 Louvain, Belgium
[2] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
基金
英国工程与自然科学研究理事会;
关键词
FET; flip chip; GaN; high electron mobility transistors (HEMT); micro-Raman; self-heating; III-nitrides;
D O I
10.1109/TED.2006.883944
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
AlGaN/GaN high electron mobility transistors (HEMT) on sapphire substrates have been studied for their potential application in RF power applications; however, the low thermal conductivity of the sapphire substrate is a major drawback. Aiming at RF system-in-a-package, the authors propose a flip-chip-integration approach, where the generated heat is dissipated to an AIN carrier substrate. Different flip-chip-bump designs are compared, using thermal simulations, electrical measurements, micro-Raman spectroscopy, and infrared thermography. The authors show that a novel bump design, where bumps are placed directly onto both source and drain ohmic contacts, improves the thermal performance of the HEMT.
引用
收藏
页码:2696 / 2702
页数:7
相关论文
共 16 条
[1]  
ANDO Y, 2001, IEDM TECH DIG
[2]   Temperature dependent transport properties in GaN, A1xGa1-xN, and InxGa1-xN semiconductors [J].
Anwar, AFM ;
Wu, SL ;
Webster, RT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :567-572
[3]   Multilayer thin-film MCM-D for the integration of high-performance RF and microwave circuits [J].
Carchon, G ;
Vaesen, K ;
Brebels, S ;
De Raedt, W ;
Beyne, E ;
Nauwelaers, B .
IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2001, 24 (03) :510-519
[4]   Substrate removal of AlGaN/GaN HEMTs using laser lift-off [J].
Das, J ;
Ruythooren, W ;
Vandersmissen, R ;
Derluyn, J ;
Germain, M ;
Borghs, G .
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07) :2655-2658
[5]   Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer -: art. no. 054501 [J].
Derluyn, J ;
Boeykens, S ;
Cheng, K ;
Vandersmissen, R ;
Das, J ;
Ruythooren, W ;
Degroote, S ;
Leys, MR ;
Germain, M ;
Borghs, G .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)
[6]   Self-heating in high-power AlGaN-GaN HFET's [J].
Gaska, R ;
Osinsky, A ;
Yang, JW ;
Shur, MS .
IEEE ELECTRON DEVICE LETTERS, 1998, 19 (03) :89-91
[7]  
JI H, 2006, P MRS, V892, P389
[8]   Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy [J].
Kuball, M ;
Hayes, JM ;
Uren, MJ ;
Martin, T ;
Birbeck, JCH ;
Balmer, RS ;
Hughes, BT .
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (01) :7-9
[9]  
KUBALL M, 2006, IN PRESS P IEEE MTTS
[10]   Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method [J].
Kuzmík, J ;
Javorka, P ;
Alam, A ;
Marso, M ;
Heuken, M ;
Kordos, P .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (08) :1496-1498