GaN MMIC Doherty Power Amplifier Solutions for Backhaul Microwave Links

被引：0

作者：

Camarchia, V. ^{[1
]}

Colantonio, P. ^{[2
]}

Emanuelsson, T. ^{[3
]}

Ghione, G. ^{[1
]}

Giannini, F. ^{[2
]}

Giofre, R. ^{[2
]}

Piazzon, L. ^{[2
]}

Pirola, M. ^{[1
]}

Quaglia, R. ^{[1
]}

Wegeland, T. ^{[3
]}

机构：

[1] Politecn Torino, Turin, Italy

[2] Univ Roma Tor Vergata, Rome, Italy

[3] Ericsson Microwave Syst AB, Molndal, Sweden

来源：

2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS) | 2013年

关键词：

MMIC; power amplifier; Doherty; gallium nitride; backhaul; EFFICIENCY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, two 5W power amplifier solutions for microwave backhaul at 7GHz are presented. They are based on 0.25 mu m GaN on SiC MMIC technology, and rely on advanced Doherty schemes. The first solution maximizes the back-off efficiency at center frequency, reaching a value around 50% at 7 dB OBO. The second MMIC is optimized for a wideband behavior, with efficiency exceeding 40% on a 15% relative bandwidth. Characterization results and system level behavior of the two proposed MMICs are compared and discussed.

引用

页数：3

共 4 条

[1] 7 GHz MMIC GaN Doherty Power Amplifier With 47% Efficiency at 7 dB Output Back-Off [J].