A model for fatigue in ferroelectric perovskite thin films

被引:341
作者
Dawber, M
Scott, JF [1 ]
机构
[1] Univ Cambridge, Dept Earth Sci, Symetrix Ctr Ferr, Cambridge CB2 3EQ, England
[2] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia
关键词
D O I
10.1063/1.125938
中图分类号
O59 [应用物理学];
学科分类号
摘要
An analytic expression in closed form is given for "fatigue," the dependence of P(N), the switched charge per unit area P versus switching event number N, in ABO(3) perovskite structure ferroelectric thin films is given. The analysis is based upon Arlt's model for fatigue in bulk perovskites, which involves preferential electromigration of oxygen vacancies to sites parallel to the electrode-ferroelectric interface plane, together with some arguments by Brennan on the effectiveness of such defect planes in pinning domain walls. The model is applied to PZT/Pt with no adjustable parameters and yields in complete agreement with experimental data the dependence of P(N) at different frequencies, different voltages, and different temperatures. Notably, unlike other proposals in the literature, the model does not involve any charge injection from the electrodes. (C) 2000 American Institute of Physics. [S0003-6951(00)01008-1].
引用
收藏
页码:1060 / 1062
页数:3
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