Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon

被引：3

作者：

Liu Caichi ^{[1
]}

Hao Qiuyan

Zhang Jianfeng

Teng Xiaoyun

Sun Shilong

Qigang Zhou

Wang Jing

Xiao Qinghua

机构：

[1] Hebei Univ Technol, Inst Informat Funct Mat, Tianjin 300130, Peoples R China

[2] Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China

来源：

RARE METALS | 2006年 / 25卷 / 04期

基金：

中国国家自然科学基金;

关键词：

flow pattern defects; grown-in defects; atomic force microscopy; Czochralski-grown silicon;

D O I：

10.1016/S1001-0521(06)60073-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The morphology and microstructure of flow pattern defects (FPDs) in lightly boron-doped Czochralski-grown silicon (Cz-Si) crystals were investigated using optical microscopy and atomic force microscopy. The experimental results showed that the morphology of FPDs was parabola-like with several steps. Single-type and dual-type voids were found on the tip of FPDs and two heaves exist on the left and right sides of the void. All the results have proved that FPDs were void-type defects. These results are very useful to investigate FPDs in Cz-Si wafers further and explain the annihilation of FPDs during high-temperature annealing.

引用

页码：389 / 392

页数：4

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