Fabrication of complex micro/nanopatterns on semiconductors by the multi-beam interference of femtosecond laser

被引:7
作者
Jia, Xin [1 ]
Dong, Lingling [2 ]
机构
[1] Shanghai Dianji Univ, Dept Math & Phys, Shanghai 201306, Peoples R China
[2] Fudan Univ, Dept Chem, Shanghai 200433, Peoples R China
来源
8TH INTERNATIONAL CONFERENCE ON LASER ASSISTED NET SHAPE ENGINEERING (LANE 2014) | 2014年 / 56卷
基金
中国国家自然科学基金;
关键词
femtosecond laser; complex micro/nanostructures; multi-beam interference; polarization; semiconductors; HOLOGRAPHIC LITHOGRAPHY; DAMAGE;
D O I
10.1016/j.phpro.2014.08.018
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Short periodic nanostructures with periods much smaller than the laser wavelength (1/10-1/2 lambda) are fabricated on semiconductors after femtosecond laser irradiation. Laser polarization is an important factor to influence the formation of laser-induced nanostructures. Combining the fabrication of short periodic nanostructures induced by femtosecond laser with multi-beam interference, different types of complex micro/nanopattems have been induced by the two-, three- and four-beam interferences of femtosecond laser with the modification of laser polarization combinations. The micro/nanopattems are composed of two parts: two-dimensional long periodic micro-patterns and short periodic nano-patterns. Theoretical calculations of interferential polarization and intensity patterns for different polarization combinations explain well the experimental results. These researches have potential applications in the nanopatteming of semiconductors. (C) 2014 Published by Elsevier B.V.
引用
收藏
页码:1059 / 1065
页数:7
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