Dilute aluminum concentration in 4H-SiC :: from SIMS to LTPL measurements

被引：15
作者：
Juillaguet, S
Zielinski, M
Balloud, C
Sartel, C
Consejo, C
Boyer, B
Soulière, V
Camassel, J
Monteil, Y
机构：
[1] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier 5, France
[2] CNRS, F-34095 Montpellier, France
[3] Univ Lyon 1, Lab Multimat & Interfaces, F-69622 Villeurbanne, France
[4] Univ Montpellier 2, Serv Microsonde Sud, F-34095 Montpellier 5, France
来源：
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷
关键词：
4H-SiC; photoluminescence; secondary ion mass spectroscopy (SIMS); aluminum;
D O I：
10.4028/www.scientific.net/MSF.457-460.775
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：775 / 778
页数：4
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