Magnetotransport properties of individual InAs nanowires

被引：73

作者：

Dhara, Sajal ^{[1
]}

Solanki, Hari S. ^{[1
]}

Singh, Vibhor ^{[1
]}

Narayanan, Arjun ^{[1
]}

Chaudhari, Prajakta ^{[1
]}

Gokhale, Mahesh ^{[1
]}

Bhattacharya, Arnab ^{[1
]}

Deshmukh, Mandar M. ^{[1
]}

机构：

[1] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Mumbai 400005, Maharashtra, India

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 12期

关键词：

coherence length; field effect transistors; III-V semiconductors; indium compounds; magnetoresistance; nanowires; weak localisation; MOBILITY;

D O I：

10.1103/PhysRevB.79.121311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We probe the magnetotransport properties of individual InAs nanowires in a field-effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization description in diffusive conductors. The weak localization correction is modified to weak antilocalization as the gate voltage is increased. We show that the gate voltage can be used to tune the phase coherence length (l(phi)) and spin-orbit length (l(so)) by a factor of 2. In the high field and low-temperature regime we observe that the mobility of devices can be modified significantly as a function of magnetic field. We argue that the role of skipping orbits and the nature of surface scattering is essential in understanding high-field magnetotransport in nanowires.

引用

页数：4

共 39 条

[1] Imaging magnetic focusing of coherent electron waves [J].