Pixellated readout IC: Analysis for single photon infrared detector for fast time of arrival applications

被引:0
作者
Fahim, Farah [1 ,2 ]
Fathipouri, Vala [1 ]
Deptuch, Grzegorz [2 ]
Mohseni, Hooman [1 ]
机构
[1] Northwestern Univ, Dept Elect Engn, 2145 Sheridan Rd, Evanston, IL 60208 USA
[2] Fermilab Natl Accelerator Lab, ASIC Dev Grp, Dept Elect Engn, Particle Phys Div, BP 500,MS 222, Batavia, IL 60510 USA
来源
2015 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2015年
关键词
single photon detection; photon counting; time of arrival; dead-time less readout; NOISE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The nano-injection sensor is a new approach towards high-sensitivity short-wave infrared photon imagers. It resolves the conflict of requiring a large area for high quantum efficiency and small area for high fidelity by using a relatively large micron-scale absorbing volume, and nano-scale sensing elements, which regulates the electron flow and amplifies the signal. The front-end electronics for the Single Photon Imaging nano-injection detector consists of an ROIC with 32 x 32 pixel array with a pixel size of 100 m x 100p.m. Each pixel consists of a charge sensitive preamplifier with leakage current compensation circuit, a shaping amplifier, an AC-coupled comparator with a 7 bit trimming DAC for offset cancellation, a 10-bit counter for photon counting, and a 10-bit shift register for data readout. The ROIC provides dead-time less, continuous readout with 32 parallel LVDS outputs to achieve full frame readout within
引用
收藏
页码:682 / 685
页数:4
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