Ultrafast photodetector based on InP/GaInAs heterostructure

被引：0

作者：

Averine, S ^{[1
]}

Chan, YC ^{[1
]}

Lam, YL ^{[1
]}

Bondarenko, O ^{[1
]}

Sachot, R ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch EEE, Singapore 639798, Singapore

来源：

IMOC 2001: PROCEEDINGS OF THE 2001 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE: THE CHALLENGE OF THE NEW MILLENIUM: TECHNOLOGICAL DEVELOPMENT WITH ENVIRONMENTAL CONSCIOUSNESS | 2001年

关键词：

impulse response; photodetector; heterobarier; modeling;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Impulse response of a heterobarrier metal-semiconductor-metal photodiode to a short laser pulse is computed and discussed in terms of the distribution of photogenerated carriers and electric fields. We show that the use of heterobarrier structure greatly enhances the response speed of InP/GaInAs MSM-photodetector.

引用

页码：377 / 380

页数：4

共 10 条

[1] Two-dimensional device modeling and analysis of GaInAs metal-semiconductor-metal photodiode structures
Averin, S
Sachot, R
Hugi, J
deFays, M
Ilegems, M
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) : 1553 - 1558
[2] ULTRAWIDE-BAND LONG-WAVELENGTH P-I-N PHOTODETECTORS
BOWERS, JE
BURRUS, CA
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (10) : 1339 - 1350
[3] NANOSCALE TERA-HERTZ METAL-SEMICONDUCTOR-METAL PHOTODETECTORS
CHOU, SY
LIU, MY
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) : 2358 - 2368
[4] Hockney R. W., 1988, COMPUTER SIMULATION
[5] CARRIER TRAPPING IN ULTRAFAST METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON INGAAS/GAAS-ON-GAAS SUPERLATTICES
HUGI, J
HADDAB, Y
SACHOT, R
ILEGEMS, M
[J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) : 1785 - 1794
[6] GA0.47IN0.53AS METAL-SEMICONDUCTOR-METAL PHOTODIODES USING A LATTICE MISMATCHED AL0.4GA0.6AS SCHOTTKY ASSIST LAYER
KIKUCHI, T
OHNO, H
HASEGAWA, H
[J]. ELECTRONICS LETTERS, 1988, 24 (19) : 1208 - 1210
[7] PICOSECOND PULSE RESPONSE CHARACTERISTICS OF GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS
MOGLESTUE, C
ROSENZWEIG, J
KUHL, J
KLINGENSTEIN, M
LAMBSDORFF, M
AXMANN, A
SCHNEIDER, J
HULSMANN, A
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) : 2435 - 2448
[8] Ramo S., 1939, P IRE, V27, P584, DOI [DOI 10.1109/JRPROC.1939.228757, 10.1109/JRPROC.1939.228757]
[9] INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS FOR LONG WAVELENGTH OPTICAL COMMUNICATIONS
SOOLE, JBD
SCHUMACHER, H
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (03) : 737 - 752
[10] HIGH-PERFORMANCE OF FE-INP INGAAS METAL-SEMICONDUCTOR METAL PHOTODETECTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
YANG, L
SUDBO, AS
LOGAN, RA
TANBUNEK, T
TSANG, WT
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (01) : 56 - 58

← 1 →