Interface related radiative recombination on a type-II broken-gap single GaInAsSb/InAs heterojunction

被引：0
|
作者：
Korolev, K. A. [1 ,3 ]
Moiseev, K. D. [2 ]
Berezovets, V. A. [2 ]
Mikhailova, M. P. [2 ]
Yakovlev, Yu. P. [2 ]
Parfeniev, R. V. [2 ]
Meinning, C. J. [4 ]
McCombe, B. D. [4 ]
机构：
[1] RAS, Inst Radio Engn & Elect, Moscow 117901, Russia
[2] RAS, A F loff Phys Tech, St Petersburg, Russia
[3] Tufts Univ, Dept ECE, Medford, MA 02155 USA
[4] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
来源：
NONEQUILIBRIUM CARRIER DYNAMICS IN SEMICONDUCTORS PROCEEDINGS | 2006年 / 110卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Magneto-photoluminescence studies have been performed on the type-II broken-gap GaInAsSb/InAs single heterostructures with 2D-electon channel at the interface containing two occupied energy subbnads. Photoluminescence spectra manifest a set of pronounced emission bands in the spectral region of 0.3-0.5 eV and it has been investigated in magnetic fields up to 10 T.
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页码：329 / +
页数：2
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