Tunable quasi-two-dimensional electron gases in oxide heterostructures

被引：1370
|
作者：
Thiel, S.
Hammerl, G.
Schmehl, A.
Schneider, C. W.
Mannhart, J. [1 ]
机构：
[1] Univ Augsburg, Inst Phys, Ctr Elect Correlat & Magnetism, D-86135 Augsburg, Germany
[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
来源：
SCIENCE | 2006年 / 313卷 / 5795期
关键词：
D O I：
10.1126/science.1131091
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
We report on a large electric-field response of quasi-two-dimensional electron gases generated at interfaces in epitaxial heterostructures grown from insulating oxides. These device structures are characterized by doping layers that are spatially separated from high-mobility quasi-two-dimensional electron gases and therefore present an oxide analog to semiconducting high - electron mobility transistors. By applying a gate voltage, the conductivity of the electron gases can be modulated through a quantum phase transition from an insulating to a metallic state.
引用
收藏
页码：1942 / 1945
页数：4
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