Thermodynamic aspects of the growth of SiC single crystals using the CF-PVT process

被引：14

作者：

Chaussende, Didier

Blanquet, Elisabeth

Baillet, Francis

Ucar, Magali

Chichignoud, Guy

机构：

[1] INPGrenoble, Minatec, Mat & Genie Phys Lab, F-38016 Grenoble 1, France

[2] INPGrenoble, CNRS, UMR5614, Thermodynam & Physicochim Met Lab, F-38402 St Martin Dheres, France

[3] Savoie Technolac, NOVASiC, F-73375 Le Bourget Du Lac, France

来源：

CHEMICAL VAPOR DEPOSITION | 2006年 / 12卷 / 8-9期

关键词：

silicon carbide; PVT; thermodynamics;

D O I：

10.1002/cvde.200606471

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The main trends that govern the continuous-feed physical vapor transport (PVT), bulk-crystal-growth process is investigated experimentally, together with thermodynamic and computation fluid dynamics (CFD) calculations. Several chemical systems are considered. An analysis of the chemistry of every successive step (CVD, transfer, and PVT) is presented first. The effects of hydrogen and chlorine are then investigated. Then, the interaction between the different steps is discussed. The strong chemical interaction which exists between the CVD and the PVT zones is demonstrated to require the consideration of the whole process and not the two zones separately.

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页码：541 / 548

页数：8

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