Optimization of measurement parameters in Doppler broadening spectroscopy

被引：6

作者：

Pi, XD ^{[1
]}

Burrows, CP ^{[1
]}

Coleman, PG ^{[1
]}

机构：

[1] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England

来源：

APPLIED SURFACE SCIENCE | 2002年 / 194卷 / 1-4期

关键词：

Doppler broadening spectroscopy; vacancies; silicon; annihilation radiation;

D O I：

10.1016/S0169-4332(02)00127-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The choice of regions of interest (ROIs) in the annihilation gamma line spectrum, which define the S and W parameters commonly used in the study of vacancy-type defects in Si, has been optimized by simulations using theoretical Doppler-broadened spectra. The figure of merit used is the difference between the S(W) parameter and its value in bulk Si expressed as multiple of the standard deviation in S(W). The optimum ROIs depend on the crystalline orientation of the Si and the energy resolution of the gamma ray detector used. Experimental data on B+-implanted Si were found to be consistent with the simulation results, which can therefore be used reliably to guide further experimental work. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：255 / 259

页数：5

共 13 条

[1] Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy [J].