Excitonic Bose-Einstein condensation in Ta2NiSe5 above room temperature

被引：143

作者：

Seki, K. ^{[1
]}

Wakisaka, Y. ^{[2
,3
]}

Kaneko, T. ^{[1
]}

Toriyama, T. ^{[1
]}

Konishi, T. ^{[4
]}

Sudayama, T. ^{[2
,3
]}

Saini, N. L. ^{[5
]}

Arita, M. ^{[6
]}

Namatame, H. ^{[6
]}

Taniguchi, M. ^{[6
,7
]}

Katayama, N. ^{[8
]}

Nohara, M. ^{[9
]}

Takagi, H. ^{[10
]}

Mizokawa, T. ^{[2
,3
]}

Ohta, Y. ^{[1
]}

机构：

[1] Chiba Univ, Dept Phys, Inage Ku, Chiba 2638522, Japan

[2] Univ Tokyo, Dept Phys, Kashiwa, Chiba 2778561, Japan

[3] Univ Tokyo, Dept Complex Sci & Engn, Kashiwa, Chiba 2778561, Japan

[4] Chiba Univ, Dept Nanomat Sci, Inage Ku, Chiba 2638522, Japan

[5] Univ Roma La Sapienza, Dept Phys, I-00185 Rome, Italy

[6] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7390046, Japan

[7] Hiroshima Univ, Grad Sch Sci, Higashihiroshima 7398526, Japan

[8] Nagoya Univ, Dept Appl Phys, Chikusa Ku, Nagoya, Aichi 4648601, Japan

[9] Okayama Univ, Dept Phys, Okayama 7008530, Japan

[10] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 15期

基金：

日本学术振兴会;

关键词：

ENERGY-FUNCTIONAL APPROACH; TRANSITION; INSULATOR; SYSTEMS; STATE;

D O I：

10.1103/PhysRevB.90.155116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that finite temperature variational cluster approximation (VCA) calculations on an extended Falicov-Kimball model can reproduce angle-resolved photoemission spectroscopy (ARPES) results on Ta2NiSe5 across a semiconductor-to-semiconductor structural phase transition at 325 K. We demonstrate that the characteristic temperature dependence of the flat-top valence band observed by ARPES is reproduced by the VCA calculation on the realistic model for an excitonic insulator only when the strong excitonic fluctuation is taken into account. The present calculations indicate that Ta2NiSe5 falls in the Bose-Einstein condensation regime of the excitonic insulator state.

引用

页数：7

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