Design and Implementation of Integrated Common Mode Capacitors for SiC-JFET Inverters

被引:44
作者
Robutel, Remi [1 ]
Martin, Christian [1 ]
Buttay, Cyril [1 ]
Morel, Herve [1 ]
Mattavelli, Paolo [2 ]
Boroyevich, Dushan [3 ]
Meuret, Regis [4 ]
机构
[1] Univ Lyon, INSA Lyon, F-69621 Villeurbanne, France
[2] Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA 24060 USA
[3] Ctr Power Elect Syst, Blacksburg, VA 24061 USA
[4] Hispano Suiza, Safran Power, SAFRAN Grp, F-75724 Paris, France
关键词
Electromagnetic compatibility; inverters; multichip modules; POWER; ATTENUATION; EMISSIONS; FILTERS; DEVICES;
D O I
10.1109/TPEL.2013.2279772
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper deals with the issue of electromagnetic interference (EMI) in SiC-JFET inverter power modules, and proposes a solution to limit conducted emissions at high frequencies. SiC-JFET inverters can achieve very fast switching, thereby reducing commutation losses, at the cost of a high level of EMI. In order to limit conducted EMI emissions, it is proposed to integrate small-value common-mode (CM) capacitors, directly into the power module. High-frequency noise, which is usually difficult to filter, is then contained within the module, thus keeping it far from the external network. This approach is in line with the current trend toward the integration of various functions (such as protection, sensors or drivers) around power devices in modern power modules. To demonstrate this concept, the resulting CM noise was investigated, and compared with a standard configuration. Simulations were used to design the integrated capacitors, and measurements were carried out on an experimental SiC-JFET half-bridge structure. A significant reduction was achieved in the experimentally observed CM conducted emissions, with a very minor influence on the switching waveforms, losses, and overall size of the system. The benefits and limitations of this design are discussed for the case of mid-power range inverters for aircraft applications.
引用
收藏
页码:3625 / 3636
页数:12
相关论文
共 26 条
[1]  
Aggeler D, 2008, APPL POWER ELECT CO, P801
[2]   Attenuation of conducted EMI emissions from an inverter-driven motor [J].
Akagi, Hirofumi ;
Shimizu, Takayuki .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2008, 23 (01) :282-290
[3]  
[Anonymous], 2008, DO160FEUROCAE14F RTC
[4]   Impedance interaction and EMI attenuation in converters with an integrated transmission-line filter [J].
Baisden, Andrew C. ;
Boroyevich, Dushan ;
van Wyk, Jacobus Daniel .
APEC 2007: TWENTY-SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1 AND 2, 2007, :1203-+
[5]   POWER SEMICONDUCTOR-DEVICE FIGURE OF MERIT FOR HIGH-FREQUENCY APPLICATIONS [J].
BALIGA, BJ .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) :455-457
[6]   Modelling, analysis, and experimental study of SiC JFET body diode [J].
Ben Salah, T. ;
Lahbib, Y. ;
Morel, H. .
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 53 (01)
[7]   Minimization of drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor [J].
Berry, Olivier ;
Hamieh, Youness ;
Rael, Stephane ;
Meibody-Tabar, Farid ;
Vieillard, Sebastien ;
Bergogne, Dominique ;
Morel, Herve .
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 :957-+
[8]   Passive and Active Hybrid Integrated EMI Filters [J].
Biela, Juergen ;
Wirthmueller, Alexander ;
Waespe, Roman ;
Heldwein, Marcello Lobo ;
Raggl, Klaus ;
Kolar, Johann W. .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2009, 24 (5-6) :1340-1349
[9]   Robustness of SiC JFET in Short-Circuit Modes [J].
Boughrara, Narjes ;
Moumen, Sabrine ;
Lefebvre, Stephane ;
Khatir, Zoubir ;
Friedrichs, Peter ;
Faugieres, Jean-Claude .
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (01) :51-53
[10]  
Burgos Rolando, 2009, Proceedings of the 2009 IEEE Energy Conversion Congress and Exposition. ECCE 2009, P2293, DOI 10.1109/ECCE.2009.5316075