External Capacitor-Less Low Drop-Out Regulator With 25 dB Superior Power Supply Rejection in the 0.4-4 MHz Range

被引:156
作者
Park, Chang-Joon [1 ]
Onabajo, Marvin [2 ]
Silva-Martinez, Jose [1 ]
机构
[1] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
[2] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
关键词
External capacitor-less LDO; fast capacitor-less LDO; high PSR LDO; low drop-out (LDO) regulator; low-noise LDO; power management; power supply rejection (PSR); VOLTAGE; LDO;
D O I
10.1109/JSSC.2013.2289897
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents design techniques for a high power supply rejection (PSR) low drop-out (LDO) regulator. A bulky external capacitor is avoided to make the LDO suitable for system-on-chip (SoC) applications while maintaining the capability to reduce high-frequency supply noise. The paths of the power supply noise to the LDO output are analyzed, and a power supply noise cancellation circuit is developed. The PSR performance is improved by using a replica circuit that tracks the main supply noise under process-voltage-temperature variations and all operating conditions. The effectiveness of the PSR enhancement technique is experimentally verified with an LDO that was fabricated in a 0.18 mu m CMOS technology with a power supply of 1.8 V. The active core chip area is 0.14 mm(2), and the entire proposed LDO consumes 80 mu A of quiescent current during operation mode and 55 mu A of quiescent current in standby mode. It has a drop-out voltage of 200 mV when delivering 50 mA to the load. The measured PSR is better than -56 dB up to 4 MHz when delivering a current of 50 mA. Compared to a conventional uncompensated LDO, the proposed architecture presents a PSR improvement of 34 dB and 25 dB at 1 MHz and 4 MHz, respectively.
引用
收藏
页码:486 / 501
页数:16
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