Hole-hole interaction effect in the conductance of the two-dimensional hole gas in the ballistic regime - art. no. 076406

被引:85
作者
Proskuryakov, YY [1 ]
Savchenko, AK
Safonov, SS
Pepper, M
Simmons, MY
Ritchie, DA
机构
[1] Univ Exeter, Sch Phys, Stocker Rd, Exeter EX4 4QL, Devon, England
[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1103/PhysRevLett.89.076406
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
On a high-mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, k(B)Ttau/(h) over bar >1. It is shown that the "metallic" behavior of the resistivity (drho/dT>0) of the low-density 2DHG is caused by the hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant F-0(sigma) which controls the sign of drho/dT.
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页数:4
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