Hole-hole interaction effect in the conductance of the two-dimensional hole gas in the ballistic regime - art. no. 076406

被引：85

作者：

Proskuryakov, YY ^{[1
]}

Savchenko, AK

Safonov, SS

Pepper, M

Simmons, MY

Ritchie, DA

机构：

[1] Univ Exeter, Sch Phys, Stocker Rd, Exeter EX4 4QL, Devon, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevLett.89.076406

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

On a high-mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, k(B)Ttau/(h) over bar >1. It is shown that the "metallic" behavior of the resistivity (drho/dT>0) of the low-density 2DHG is caused by the hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant F-0(sigma) which controls the sign of drho/dT.

引用

页数：4

共 28 条

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