Low threshold GaInNAsSb quantum well lasers

被引：3

作者：

Shimizu, H ^{[1
]}

Setiagung, C ^{[1
]}

Kumada, K ^{[1
]}

Kasukawa, A ^{[1
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama Res & Dev Labs, Nishi Ku, Yokohama, Kanagawa 2200073, Japan

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS | 2002年 / 4651卷

关键词：

GaInNAsSb; GaInNAs; 1.3 mu m; GSMBE;

D O I：

10.1117/12.467962

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Long wavelength GaInNAsSb quantum well lasers that include small amount of Sb were successfully grown by gas-source molecular beam epitaxy (GSMBE). We confirmed that Sb reacts in GaInNAs/GaAs system like a surfactant, which increase the critical thickness at which the growth mode changes from the 2-dimentional (2-D) growth to the 3-dimentional (3-D) growth. The GaInNAsSb/GaAs lasers oscillated under CW operation at 1.258mum at room temperature. The low CW threshold current of 12.4mA and high characteristic temperature (T-0) of 157K were obtained for GaInNAsSb/GaAs lasers, which is the best result for GaInNAs-based narrow stripe lasers. To extend the lasing wavelength over 1.3mum with keeping the threshold current density low, we adopted GaNAs barriers instead of GaAs barriers. We obtained the very low threshold current density of 570A/cm(2) at 900mum-long cavity with the lasing wavelength of 1.308mum. We can say that GaInNAsSb lasers are very promising material for realizing peltier-free devices for access network.

引用

页码：26 / 31

页数：6

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