Mechanical and dielectric relaxation in neodymium-modified bismuth titanate ceramics

被引:23
作者
Li, W [1 ]
Su, D [1 ]
Zhu, JS [1 ]
Wang, YN [1 ]
机构
[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
基金
中国国家自然科学基金;
关键词
ferroelectric fatigue; internal friction; oxygen vacancy;
D O I
10.1016/j.ssc.2004.05.008
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The internal friction (IF) and Young's modulus of Bi3.15Nd0.85Ti3O12 (BNT) ceramics were measured using the reed vibration method in the temperature range from 300 to 750 K at kHz frequencies. One high IF peak (P1) associated with a modulus defect appeared around 453 K. This peak is related to the migration of oxygen vacancies among those unequal oxygen positions in the lattice of the ceramics, which makes it possible to determine the concentration of oxygen vacancies by the peak height. Another peak (P2) appeared around 532 K, which is far below the Curie point (around 890 K), and was attributed to the interaction between oxygen vacancies and 90degrees domain walls. These results could be helpful to the understanding of the fatigue mechanisms in ferroelectric materials. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:189 / 193
页数:5
相关论文
共 25 条
  • [1] AlShareef HN, 1996, APPL PHYS LETT, V68, P690, DOI 10.1063/1.116593
  • [2] FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES
    DEARAUJO, CAP
    CUCHIARO, JD
    MCMILLAN, LD
    SCOTT, MC
    SCOTT, JF
    [J]. NATURE, 1995, 374 (6523) : 627 - 629
  • [3] Model experiments on fatigue of Pb(Zr0.53Ti0.47)O3 ferroelectric thin films
    Du, XF
    Chen, IW
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (15) : 1923 - 1925
  • [4] FATIGUE AND SWITCHING IN FERROELECTRIC MEMORIES - THEORY AND EXPERIMENT
    DUIKER, HM
    BEALE, PD
    SCOTT, JF
    DEARAUJO, CAP
    MELNICK, BM
    CUCHIARO, JD
    MCMILLAN, LD
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) : 5783 - 5791
  • [5] ULTRALOW-FREQUENCY INTERNAL-FRICTION MECHANISMS IN FERROELECTRICS
    GRIDNEV, SA
    POSTNIKOV, VS
    [J]. FERROELECTRICS, 1980, 29 (3-4) : 157 - 161
  • [6] Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition
    Kojima, T
    Sakai, T
    Watanabe, T
    Funakubo, H
    Saito, K
    Osada, M
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (15) : 2746 - 2748
  • [7] Dielectric loss study of oxygen vacancies and domain walls in Sr2Bi4-x/3Ti5-xVxO18 ceramics
    Lu, WP
    Mao, XY
    Chen, XB
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (04) : 1973 - 1976
  • [8] Direct evidence of A-site-deficient strontium bismuth tantalate and its enhanced ferroelectric properties -: art. no. 214102
    Noguchi, Y
    Miyayama, M
    Kudo, T
    [J]. PHYSICAL REVIEW B, 2001, 63 (21)
  • [9] NOWICK S, 1972, ANELASTIC RELAXATION
  • [10] Lanthanum-substituted bismuth titanate for use in non-volatile memories
    Park, BH
    Kang, BS
    Bu, SD
    Noh, TW
    Lee, J
    Jo, W
    [J]. NATURE, 1999, 401 (6754) : 682 - 684