Nanoscale electrical properties of cluster-assembled palladium oxide thin films

被引:14
作者
Cassina, V. [1 ,2 ]
Gerosa, L. [3 ]
Podesta, A. [1 ,2 ]
Ferrari, G. [3 ]
Sampietro, M. [3 ]
Fiorentini, F. [1 ,2 ]
Mazza, T. [1 ,2 ]
Lenardi, C. [2 ,4 ]
Milani, P. [1 ,2 ]
机构
[1] Univ Milan, Dipartimento Fis, I-20133 Milan, Italy
[2] Univ Milan, CIMaINa, I-20133 Milan, Italy
[3] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
[4] Univ Milan, Ist Fisiol Gen & Chim Biol, I-20134 Milan, Italy
来源
PHYSICAL REVIEW B | 2009年 / 79卷 / 11期
关键词
atomic force microscopy; nanostructured materials; palladium compounds; permittivity; thin films; X-ray photoelectron spectra; ATOMIC-FORCE MICROSCOPY; SCANNING CAPACITANCE MICROSCOPY; PROBE MICROSCOPY; DEPOSITION; PDO;
D O I
10.1103/PhysRevB.79.115422
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electrical properties of cluster-assembled nanostructured palladium oxide (ns-PdOx) thin films grown by supersonic cluster beam deposition have been characterized by means of a customized ac current-sensing atomic force microscope. Scanning impedance microscopy is shown to provide a deep picture of the electrical properties of thin nanostructured interfaces even in the case of very soft and poorly adherent films. In particular, the dielectric constant of ns-PdOx can be quantitatively determined as well as its I-V characteristics. Moreover, the measurement of the tip-sample parasitic capacitance can be exploited to probe the overall mesoscale conductive character of thin films and to give a complementary and more precise view of the oxidation of ns-PdOx obtained by x-ray photoemission spectroscopy.
引用
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页数:8
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