Control of nucleation site and growth orientation of bulk GaN crystals

被引：18

作者：

Yano, M ^{[1
]}

Okamoto, M ^{[1
]}

Yap, YK ^{[1
]}

Yoshimura, M ^{[1
]}

Mori, Y ^{[1
]}

Sasaki, T ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 10A期

关键词：

bulk GaN; Na flux; AlN film; XRD; nucleation;

D O I：

10.1143/JJAP.38.L1121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The melt growth of bulk GaN crystals is hindered by high nitrogen pressure (similar to 45000 atm) at melting point. Recently, bulk GaN crystals were grown at a pressure of similar to 100 atm by means of Na flux. However the flux growth method failed to control the nucleation site and growth orientation of GaN. In this work, oriented GaN crystals were obtained by means of a seeded Na Bur method with the addition of oriented AlN(0001) film to the growth ambient. The nucleation of bulk GaN was spatially confined to the top surface of the AIN film and grown with the GaN[0001] axis parallel to the AlN[0001] axis. In contrast: no bulk GaN was observed on the SiC(0001) surface which was also lattice matched with the GaN. Both X-ray diffraction (XRD) and cathodoluminescence confirm the high quality of the as-grown GaN.

引用

页码：L1121 / L1123

页数：3

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