A graphene quantum dot realized by an armchair graphene nanoribbon with line defect
被引:1
作者:
Sui, Xiao-Yan
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机构:
Northeastern Univ, Coll Sci, Shenyang 110004, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110004, Peoples R China
Sui, Xiao-Yan
[1
]
Li, Zhi-Chao
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机构:
Northeastern Univ, Coll Sci, Shenyang 110004, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110004, Peoples R China
Li, Zhi-Chao
[1
]
Gong, Wei-Jiang
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Northeastern Univ, Coll Sci, Shenyang 110004, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110004, Peoples R China
Gong, Wei-Jiang
[1
]
Yu, Guo-Dong
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机构:
Jilin Univ, Dept Phys, Changchun 130023, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110004, Peoples R China
Yu, Guo-Dong
[2
]
Chen, Xiao-Hui
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机构:
Northeastern Univ, Coll Sci, Shenyang 110004, Peoples R ChinaNortheastern Univ, Coll Sci, Shenyang 110004, Peoples R China
Chen, Xiao-Hui
[1
]
机构:
[1] Northeastern Univ, Coll Sci, Shenyang 110004, Peoples R China
[2] Jilin Univ, Dept Phys, Changchun 130023, Peoples R China
来源:
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
|
2013年
/
7卷
/
08期
关键词:
armchair graphene nanoribbons;
line defects;
quantum dots;
TRANSPORT;
STATE;
D O I:
10.1002/pssr.201307152
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The electron transport in a semiconducting armchair graphene nanoribbon with line defect is theoretically investigated, by coupling it to two normal metallic leads. It is found that the line defect induces a new localized quantum state near the Dirac point, and that the coupling between this state and the leads provides a channel for the resonant tunneling. This means that such a finite-size nanoribbon can be viewed as a quantum dot. When two line defects are present simultaneously, a coupled quantum dot forms, leading to the splitting of the conductance peaks. With these results, we propose such a structure to be a promising candidate of an electron transistor. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
Geim, A. K.
;
Novoselov, K. S.
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h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
Geim, A. K.
;
Novoselov, K. S.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England