A Compact 3-30-GHz 68.5-ps CMOS True-Time Delay for Wideband Phased Array Systems

被引:20
作者
Jung, Minjae [1 ,2 ]
Min, Byung-Wook [1 ]
机构
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 03722, South Korea
[2] Samsung Elect, Network Business, Suwon 16677, South Korea
关键词
All-pass network (APN); CMOS switch; delay variation (DV); phased arrays; true-time delay (TTD); FRONT-ENDS; KU-BAND; SHIFTERS; TRANSCEIVER; NETWORK;
D O I
10.1109/TMTT.2020.3023710
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents a compact 4-bit switched-line true-time delay (TTD) circuit over a wide frequency range extending from 3 to 30 GHz using novel delay elements. The delay elements, namely, the cascading coupled all-pass network (CAPN) and noncoupled all-pass network (NCAPN), were employed in the proposed TTD circuit to improve the delay-bandwidth product (DBW) while maintaining its compact size and low delay variation (DV). For comparison, a theoretical analysis for understanding the group delay feature of the APN with various coupling coefficients is presented along with low-pass network (LPN). To verify the proposed structure, the proposed delays are applied to construct the 4-bit switched-line TTD by utilizing two single-pole double-through (SPDT) and three double-pole double-through (DPDT) switches in a 28-nm CMOS process. The circuit has a compact size of 1.7 mm $\times0.2$ mm, with a maximum delay of 68.5 ps and a minimum delay of 4.6 ps. The measured average insertion loss is 13.5 dB, and the in/out return loss is better than 10 dB across 3-30 GHz. The measured rms delay and gain errors are less than 2 ps and 3.2 dB, respectively, over the operating frequency range. To the best of our knowledge, the proposed TTD achieves the largest figure of merit (FoM) among the integrated TTD circuits.
引用
收藏
页码:5371 / 5380
页数:10
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