Near-infrared superluminescent diode using stacked self-assembled InAs quantum dots with controlled emission wavelengths

被引：25

作者：

Ozaki, Nobuhiko ^{[1
]}

Yasuda, Takuma ^{[1
]}

Ohkouchi, Shunsuke ^{[2
]}

Watanabe, Eiichiro ^{[3
]}

Ikeda, Naoki ^{[3
]}

Sugimoto, Yoshimasa ^{[3
]}

Hogg, Richard A. ^{[4
]}

机构：

[1] Wakayama Univ, Fac Syst Engn, Wakayama 6408510, Japan

[2] NEC Corp Ltd, Tsukuba, Ibaraki 3058501, Japan

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[4] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S3 7HQ, S Yorkshire, England

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 04期

关键词：

LIGHT-EMITTING-DIODES; WIENER-KHINCHIN THEOREM; ACTIVE-REGION; MU-M; SPECTRUM;

D O I：

10.7567/JJAP.53.04EG10

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A near-infrared superluminescent diode (SLD) using stacked InAs/GaAs quantum dots (QDs) was developed. The emission wavelength of each QD layer was controlled by varying the thickness of a strain-reducing layer deposited on the QD. The controlled ground state emission peaks enabled formation of a dipless broadband spectrum with the contributions of the first excited state emissions. The bandwidth of the resulting emission was approximately 170 nm with a peak wavelength of 1280 nm. The integrated electroluminescence intensity exhibited a superlinear relation with respect to the injected current density, indicating an SLD emission behavior owing to contributions of stimulated emissions from QDs. The developed broadband SLD was found to be suitable as a potential light source for optical coherence tomography (OCT) leading to improved resolution of OCT images. The axial resolution estimated from the Fourier-transformed spectrum is 4.1 mu m. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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