Turn-on process in 4H-SiC thyristors

被引：7
|
作者：
Levinshtein, ME [1 ]
Palmour, JW [1 ]
Rumyanetsev, SL [1 ]
Singh, R [1 ]
机构：
[1] CREE RES INC,DURHAM,NC 27703
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 07期
关键词：
D O I：
10.1109/16.595949
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Detailed turn-on measurements of 4H-Silicon Carbide (SLC) npnp thyristors are presented for a wide range of operating conditions. Comparisons with similarly-rated Silicon and Gallium Arsenide thyristors show a superior rise time and pulsed turn-on performance of SIC thyristors. Rise time for a 400 V blocking voltage, 4 V forward drop (2.8 x 10(3) A/cm(2)) SIC thyristor has been found to be of the order of 3-5 ns. Pulsed turn-on measurements show a residual voltage of only 50 V when a current density of 10(5) A/cm(2) (35 A) was achieved in 20 ns.
引用
收藏
页码：1177 / 1179
页数：3
相关论文
共 50 条
  • [1] Turn-on process in 4H-SiC thyristors
    Ioffe Inst of Russian Acad of, Science, St. Petersburg, Russia
    IEEE Trans Electron Devices, 7 (1177-1179):
  • [2] Turn-on process in 4H-SiC thyristors
    Levinshtein, ME
    Palmour, JW
    Rumyantsev, SL
    Singh, R
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 601 - 603
  • [3] Turn-on process in high voltage 4H-SiC thyristors
    Dyakonova, NV
    Levinshtein, ME
    Palmour, JW
    Rumyantsev, SL
    Singh, R
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (02) : 241 - 243
  • [4] Turn-on process in high voltage 4H-SiC thyristors
    Dyakonova, NV
    Levinshtein, ME
    Palmour, JW
    Rumyantsev, SL
    Singh, R
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 211 - 216
  • [5] Temperature dependence of turn-on process in 4H-SiC thyristors
    Dyakonova, NV
    Levinshtein, ME
    Palmour, JW
    Rumyantsev, SL
    Singh, R
    ELECTRONICS LETTERS, 1997, 33 (10) : 914 - 915
  • [6] On the homogeneity of the turn-on process in high-voltage 4H-SiC thyristors
    Levinshtein, ME
    Ivanov, PA
    Agarwal, AK
    Palmour, JW
    SOLID-STATE ELECTRONICS, 2005, 49 (02) : 233 - 237
  • [7] Temperature dependence of turn-on processes in 4H-SiC thyristors
    Levinshtein, ME
    Mnatsakanov, TT
    Ivanov, PA
    Agarwal, AK
    Palmour, JW
    Rumyantsev, SL
    Tandoev, AG
    Yurkov, SN
    SOLID-STATE ELECTRONICS, 2001, 45 (03) : 453 - 459
  • [8] Analysis of the turn-on process in 6 kV 4H-SiC junction diodes
    Mnatsakanov, TT
    Levinshtein, ME
    Ivanov, PA
    Palmour, JW
    Das, M
    Agarwal, AK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (01) : 62 - 67
  • [9] Dependence of turn-on and turn-off characteristics on anode/gate geometry of high-voltage 4H-SiC GTO thyristors
    Fedison, JB
    Chow, TP
    Ghezzo, M
    Kretchmer, JW
    ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, : 175 - 178
  • [10] Inductive switching of 4H-SiC gate turn-off thyristors
    Bayne, SB
    Tipton, CW
    Griffin, T
    Scozzie, CJ
    Geil, B
    Agarwal, AK
    Richmond, J
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (06) : 318 - 320
12345