Molecular beam epitaxy growth and characterization of self-assembled InAs quantum dots on (100) InAlAs/InP substrates

被引：0
作者：
Koo, BH
Park, YG
Makino, H
Chang, JH
Hanada, T
Shindo, D
Yao, T
机构：
[1] Tohoku Univ, Mat Res Inst, Yao Lab, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED SURFACE SCIENCE | 2002年 / 190卷 / 1-4期
关键词：
InAs quantum dots; MBE; TEM; PL;
D O I：
10.1016/S0169-4332(01)00876-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Self-assembled InAs quantum dots (QDs) on In0.52Al0.48As layer lattice matched to (1 0 0) InP substrates have been grown by molecular beam epitaxy (MBE) and evaluated by transmission electron microscopy (TEM) and photoluminescence (PL), TEM observations indicate that defect-free InAs QDs can be grown to obtain emissions over the technologically important 1.3-1.55 mum region. The PL peak positions for the QDs shift to low energy as the InAs coverage increases, corresponding to increase in QD size. The room temperature PL peak at 1.58 mum was observed from defect-free InAs QDs with average dot height of 3.6 nm. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：226 / 230
页数：5
相关论文
共 15 条
[1]   Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001) [J].
Brault, J ;
Gendry, M ;
Grenet, G ;
Hollinger, G ;
Desieres, Y ;
Benyattou, T .
APPLIED PHYSICS LETTERS, 1998, 73 (20) :2932-2934
[2]  
CARLIN JF, 1991, APPL PHYS LETT, V59, P3108
[3]   KINETIC SURFACE ROUGHENING IN MOLECULAR-BEAM EPITAXY OF INP [J].
COTTA, MA ;
HAMM, RA ;
STALEY, TW ;
CHU, SNG ;
HARRIOTT, LR ;
PANISH, MB ;
TEMKIN, H .
PHYSICAL REVIEW LETTERS, 1993, 70 (26) :4106-4109
[4]   MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC INAS/IN0.52 AL0.48 AS QUANTUM WELLS [J].
DEMIGUEL, JL ;
MEYNADIER, MH ;
TAMARGO, MC ;
NAHORY, RE ;
HWANG, DM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :617-619
[5]  
Fafard S, 1996, APPL PHYS LETT, V68, P991, DOI 10.1063/1.116122
[6]   Photoluminescence properties of dense InAs/AlInAs quantum wire arrays [J].
Li, HX ;
Daniels-Race, T ;
Hasan, MA .
JOURNAL OF CRYSTAL GROWTH, 2000, 216 (1-4) :527-531
[7]   Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy [J].
Li, HX ;
Wu, J ;
Xu, B ;
Liang, JB ;
Wang, ZG .
APPLIED PHYSICS LETTERS, 1998, 72 (17) :2123-2125
[8]   High-density InAs nanowires realized in situ on (100) InP [J].
Li, HX ;
Wu, J ;
Wang, ZG ;
Daniels-Race, T .
APPLIED PHYSICS LETTERS, 1999, 75 (08) :1173-1175
[9]   Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001) [J].
Marchand, H ;
Desjardins, P ;
Guillon, S ;
Paultre, JE ;
Bougrioua, Z ;
Yip, RYF ;
Masut, RA .
APPLIED PHYSICS LETTERS, 1997, 71 (04) :527-529
[10]   Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3 μm [J].
Nakata, Y ;
Mukai, K ;
Sugawara, M ;
Ohtsubo, K ;
Ishikawa, H ;
Yokoyama, N .
JOURNAL OF CRYSTAL GROWTH, 2000, 208 (1-4) :93-99
12