Rapid-thermal-processing-based internal gettering for heavily boron-doped Czochralski silicon

被引：3
|
作者：
Fu, Liming [1 ]
Yang, Deren [1 ]
Ma, Xiangyang [1 ]
Tian, Daxi [1 ]
Que, Duanlin [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 10期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2386949
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of rapid-thermal processing (RTP) ambients on the formation of oxygen precipitates and denuded zone (DZ) in heavily boron-doped (HB) Czochralski (Cz) silicon by a low-high (L-H) two-step annealing (800 degrees C/4 h+1000 degrees C/16 h) has been investigated. It was found that after the L-H two-step annealing, there was a high density of bulk microdefects (BMDs) and no observable DZ was formed near the surface in HB Cz silicon wafers preannealed by the RTP in Ar ambient, while the BMD density was quite low in HB Cz silicon wafers preannealed by the RTP in O-2 ambient. However, applying the preannealing of RTP sequentially in Ar and O-2 ambients allowed us to obtain a high density of BMDs in combination with a sufficient DZ by the subsequent L-H two-step annealing. This approach offers a pathway to optimize internal gettering for HB Cz silicon. (c) 2006 American Institute of Physics.
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页数：4
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