High-responsivity reduced graphene oxide gel photodetectors for visible-light detection with a large detection area and an end-contact interface

被引:15
作者
Alsaedi, Dawood [1 ,2 ]
Irannejad, Mehrdad [2 ,3 ]
Ibrahim, Khaled H. [2 ,3 ]
Almutairi, Abdulaziz [1 ]
Ramahi, Omar [1 ]
Yavuz, Mustafa [1 ,2 ]
机构
[1] Univ Waterloo, Elect & Comp Engn, Waterloo, ON, Canada
[2] Univ Waterloo, Waterloo Inst Nanotechnol, Waterloo, ON, Canada
[3] Univ Waterloo, Mech & Mechatron Engn, Waterloo, ON, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
NEAR-INFRARED PHOTORESPONSE; THIN-FILM; ULTRAVIOLET; PHOTOTRANSISTORS; NANORIBBONS; TRANSPORT; BANDGAP; EDGES;
D O I
10.1039/c6tc04784j
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Herein, the engineering and characterization of a photodetector using reduced graphene oxide gel (femtogel) as an active material are reported for the first time. The photodetector is engineered such that it contains a large detection area (interdigitated) and a femtogel-metal interface. The femtogel film is precisely placed between the interdigitated electrodes, which allows us to study the performance of the photodetector that has an end-contact interface. The femtogel width (channel) is controlled by adjusting the reactive ion etching processing time during the fabrication process. In addition, the thickness of the poly(methyl methacrylate) (PMMA) and electron-beam dose during the lithography process plays a significant role in initializing a window for etching the femtogel, which affects the channel width. In the visible range, a high responsivity has been achieved as high as 0.73 A W-1 at a low power intensity of 84 mW cm(-2). Moreover, 3.4 s and 5.2 s are recorded as the time response of the photocurrent for growth and decay, respectively, in the proposed femtogel photodetector. This could open a new avenue for the fabrication of graphene-based photodetectors since placing graphene and its derivatives that are in liquid form between electrodes in a nanoscale detector is still a challenge in advanced nanofabrication.
引用
收藏
页码:882 / 888
页数:7
相关论文
共 37 条
[1]   Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001) [J].
Arora, Ashish ;
Ghosh, Sandip ;
Arora, B. M. ;
Malzer, Stefan ;
Doehler, Gottfried .
APPLIED PHYSICS LETTERS, 2010, 97 (08)
[2]   Graphene: Electronic and Photonic Properties and Devices [J].
Avouris, Phaedon .
NANO LETTERS, 2010, 10 (11) :4285-4294
[3]   Rational Fabrication of Graphene Nanoribbons Using a Nanowire Etch Mask [J].
Bai, Jingwei ;
Duan, Xiangfeng ;
Huang, Yu .
NANO LETTERS, 2009, 9 (05) :2083-2087
[4]  
Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/NPHOTON.2010.186, 10.1038/nphoton.2010.186]
[5]   Regulating Infrared Photoresponses in Reduced Graphene Oxide Phototransistors by Defect and Atomic Structure Control [J].
Chang, Haixin ;
Sun, Zhenhua ;
Saito, Mitsuhiro ;
Yuan, Qinghong ;
Zhang, Han ;
Li, Jinhua ;
Wang, Zhongchang ;
Fujita, Takeshi ;
Ding, Feng ;
Zheng, Zijian ;
Yan, Feng ;
Wu, Hongkai ;
Chen, Mingwei ;
Ikuhara, Yuichi .
ACS NANO, 2013, 7 (07) :6310-6320
[6]   Graphene-Based Nanomaterials: Synthesis, Properties, and Optical and Optoelectronic Applications [J].
Chang, Haixin ;
Wu, Hongkai .
ADVANCED FUNCTIONAL MATERIALS, 2013, 23 (16) :1984-1997
[7]   Thin Film Field-Effect Phototransistors from Bandgap-Tunable, Solution-Processed, Few-Layer Reduced Graphene Oxide Films [J].
Chang, Haixin ;
Sun, Zhenhua ;
Yuan, Qinghong ;
Ding, Feng ;
Tao, Xiaoming ;
Yan, Feng ;
Zheng, Zijian .
ADVANCED MATERIALS, 2010, 22 (43) :4872-+
[8]   Graphene nano-ribbon electronics [J].
Chen, Zhihong ;
Lin, Yu-Ming ;
Rooks, Michael J. ;
Avouris, Phaedon .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 40 (02) :228-232
[9]   ZnO microtube ultraviolet detectors [J].
Cheng, Jiping ;
Zhang, Yunjin ;
Guo, Ruyan .
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (01) :57-61
[10]   Infrared Photodetectors Based on Reduced Graphene Oxide and Graphene Nanoribbons [J].
Chitara, Basant ;
Panchakarla, L. S. ;
Krupanidhi, S. B. ;
Rao, C. N. R. .
ADVANCED MATERIALS, 2011, 23 (45) :5419-+