Preparation and high temperature oxidation of SiC compositionally graded graphite coated with HfO2

被引：53

作者：

Shimada, S ^{[1
]}

Sato, T ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Engn, Div Mat & Engn, Sapporo, Hokkaido 0608629, Japan

来源：

CARBON | 2002年 / 40卷 / 13期

关键词：

graphite; coating; oxidation; thermal analysis; X-ray diffraction;

D O I：

10.1016/S0008-6223(02)00159-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

SiC compositionally graded (SCG) graphite was coated with sol-gel-derived HfO2 films and oxidized at 1500 degreesC in air. SCGed graphite was produced by reaction of graphite with molten Si at 1450 degreesC for 10 h. The sol-gel HfO2 precursor solution was prepared by dissolving HfCl4 in ethanol and refluxing with diethanol-amine and HNO3 and was coated on SCGed graphite by dipping. The HfO2-coated SCGed graphite was produced by decomposition of the precursor under conditions determined from the results of TG, DTA, and MS analysis. Oxidation of HfO2-coated SCGed graphite was performed at 1500 T in air. revealing a small eight loss (0.6 mg cm(2)) after 15 h. It as found that HfO2-coated SCGed graphite exhibits extremely high oxidation resistance. which may be due to the formation of HfSiO4 acting to heal pores or cracks. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：2469 / 2475

页数：7

共 14 条

[1] Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films [J].

Aarik, J ;

Aidla, A ;

Kiisler, AA ;

Uustare, T ;

Sammelselg, V .

THIN SOLID FILMS, 1999, 340 (1-2) :110-116

[2] Novel sol-gel process depositing α-Al2O3 for the improvement of graphite oxidation-resistance [J].

Bahlawane, N .

THIN SOLID FILMS, 2001, 396 (1-2) :126-130

[3] Regulation of mRNA stability - Tools for turnover: Methods for analysis of mRNA stability in eukaryotic cells [J].

Jacobson, A ;

Peltz, SW .

METHODS-A COMPANION TO METHODS IN ENZYMOLOGY, 1999, 17 (01) :1-2

[4]

Kiyono H, 2001, J ELECTROCHEM SOC, V148, pB86, DOI 10.1149/1.1339866

[5] Surface, structural and optical properties of sol-gel derived HfO2 films [J].

Nishide, T ;

Honda, S ;

Matsuura, M ;

Ide, M .

THIN SOLID FILMS, 2000, 371 (1-2) :61-65

[6]

Ogura Y., 1995, PROCEED 10 INTERCONF, V4, P767

[7]

SERON A, 1995, CARBON, V8, P1097

[8] Oxidation of hafnium carbide and titanium carbide single crystals with the formation of carbon at high temperatures and low oxygen pressures [J].

Shimada, S ;

Yunazar, F ;

Otani, S .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2000, 83 (04) :721-728

[9]

*SOC NONTR TECHN, 2000, NASDAPSPC24130, P1130

[10] ELECTRICAL-PROPERTIES OF HIGH-TEMPERATURE OXIDES, BORIDES, CARBIDES, AND NITRIDES [J].

WANG, CC ;

AKBAR, SA ;

CHEN, W ;

PATTON, VD .

JOURNAL OF MATERIALS SCIENCE, 1995, 30 (07) :1627-1641

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