GaN Substrates-Progress, Status, and Prospects

被引:91
|
作者
Paskova, Tanya [1 ]
Evans, Keith R. [1 ]
机构
[1] Kyma Technol Inc, Raleigh, NC 27617 USA
关键词
Ammonothermal growth; defects; dislocations; doping; gallium nitride (GaN); hydride vapor phase epitaxy; lattice matching; native substrates; solution growth; surface orientation; thermal conductivity; HIGH-QUALITY GAN; SINGLE-CRYSTALS; GALLIUM NITRIDE; EPITAXIAL-GROWTH; PHASE EPITAXY; NONPOLAR; FILMS; DISLOCATIONS; FABRICATION; REDUCTION;
D O I
10.1109/JSTQE.2009.2015057
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have attracted a renewed interest in development of nitride devices based on native substrates. The still low yet rapidly increasing availability of native GaN substrates opens the full potential of GaN devices and has accelerated progress in the development of several electronic and optoelectronic devices. In this paper, progress in the primary competing growth techniques for producing native GaN substrates will be reviewed. The technological issues pertaining to faster scalability of GaN substrate production will be discussed. The current state-of-the-art substrate material properties and the future prospects for the growth approaches and substrate quality will be presented.
引用
收藏
页码:1041 / 1052
页数:12
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