Electromigration time to failure of SnAgCuNi solder joints

被引：15

作者：

Basaran, Cemal ^{[1
]}

Li, Shidong ^{[1
]}

Hopkins, Douglas C. ^{[1
]}

Veychard, Damien ^{[2
]}

机构：

[1] SUNY Buffalo, Elect Packaging Lab, Buffalo, NY 14260 USA

[2] STMicroelectronics, PTM CPA Grp, F-38019 Grenoble, France

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 01期

关键词：

copper alloys; current density; electrical resistivity; electromigration; integrated circuits; nickel alloys; silver alloys; solders; tin alloys; CURRENT INDUCED DAMAGE; INTERMETALLIC GROWTH; MECHANICS; MODEL;

D O I：

10.1063/1.3159012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electromigration time to failure and electrical resistivity of 95.5%Sn-1.5%Ag-0.5%Cu-0.03W%Ni microelectronics solder joints have been investigated experimentally. A Black-type electromigration time to failure equation is developed to describe the time to failure versus current density and temperature. It is observed that resistance of a solder joint is not just a function of the temperature but also a function of the current density. The activation energy over the range of 83-174 degrees C is measured to be 0.77 +/- 0.12 eV, and the current density exponent is found to be (8.60 +/- 1.65). It is also shown that the most commonly used Black's electromigration time to failure equation cannot be used for solder joints.

引用

页数：10

共 19 条

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