Solution-processed high-performance colloidal quantum dot tandem photodetectors on flexible substrates

被引：10

作者：

Jiang, Zhenyu ^{[1
]}

You, Guanjun ^{[1
]}

Wang, Li ^{[1
]}

Liu, Jie ^{[1
]}

Hu, Wenjia ^{[2
]}

Zhang, Yu ^{[3
,4
]}

Xu, Jian ^{[1
]}

机构：

[1] Penn State Univ, Dept Engn Sci & Mech, University Pk, PA 16802 USA

[2] China Tianchen Engn Corp, Tianjin 300400, Peoples R China

[3] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

[4] Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 08期

基金：

美国国家科学基金会;

关键词：

THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; OPTOELECTRONICS; NANOCRYSTALS; ELECTRONICS; ASSEMBLIES; DISPLAYS;

D O I：

10.1063/1.4893897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a high-performance colloidal quantum dot (CQD)-based near-infrared tandem photodetector fabricated on flexible substrates via solution-processed method. The tandem photodetector on poly(ethylene terephthalate) substrates exhibited low dark current and high detectivities over similar to 8.8 x 10(11) Jones at near infrared range at similar to 0.5V bias and over similar to 10(13) Jones near 0 bias. The critical bend radii of similar to 8mm and similar to 3mm have been demonstrated for tensile and compressive bending, respectively. The performance of photodetectors remains stable under mechanical stress, making PbSe CQD material a promise candidate for flexible infrared sensing applications. (c) 2014 AIP Publishing LLC.

引用

页数：4

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