LP-MOCVD growth of BGaAsSb thick layers and BGaAsSb/GaAs quantum well structures on GaAs (001) substrates

被引：3

作者：

Jia, Zhigang ^{[1
]}

Wang, Qi ^{[1
]}

Ren, Xiaomin ^{[1
]}

Wang, Yifan ^{[1
]}

Cai, Shiwei ^{[1
]}

Zhang, Xia ^{[1
]}

Huang, Yongqing ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 394卷

基金：

对外科技合作项目（国际科技项目）; 中国国家自然科学基金;

关键词：

Sb segregation; XRD; MOCVD; BGaAsSb; Boron; BAND ALIGNMENT; BXGA1-XAS; BGAINAS; ALLOYS;

D O I：

10.1016/j.jcrysgro.2014.02.017

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this study, BGaAsSb thick layers and BGaAsSb/GaAs quantum wells (QWs) have been grown on GaAs (001) by low pressure metal-organic vapor deposition (LP-MOCVD) for the first time. It has been found that for both GaAs1-ySby thick layer and GaAs1_Sb-y(y)/GaAs QWs, the incorporation of boron leads to a decrease in Sb segregation and causes an increased solid Sb content y as well as a higher compressive strain. Similarly, Sb segregation also recedes when the arsenic partial pressure is lowered, and Sb-incorporation efficiency increases significantly. In both cases, the quaternary BGaAsSb alloys cannot be grown lattice-matched to GaAs. In addition, the PL peak wavelength red-shifts when boron is incorporated. This is in accordance with the increased Sb content. (C) 2014 Elsevier B.V. All rights reserved

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页码：74 / 80

页数：7

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