Formation and application of porous silicon

被引：679
作者：
Föll, H [1 ]
Christophersen, M [1 ]
Carstensen, J [1 ]
Hasse, G [1 ]
机构：
[1] Univ Kiel, Fac Engn, D-24143 Kiel, Germany
来源：
MATERIALS SCIENCE & ENGINEERING R-REPORTS | 2002年 / 39卷 / 04期
关键词：
electrochemistry; microstructure; self-organization; porous silicon;
D O I：
10.1016/S0927-796X(02)00090-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
All manifestations of pores in silicon are reviewed and discussed with respect to possible applications. Particular emphasis is put on macropores, which are classified in detail and reviewed in the context of pore formation models. Applications of macro-, meso-, and micropores are discussed separately together with some consideration of specific experimental topics. A brief discussion of a stochastic model of Si electrochemistry that was found useful in guiding experimental design for specific pore formation concludes the paper. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：93 / 141
页数：49
相关论文
共 117 条
  • [1] Dependence of macropore formation in n-Si on potential, temperature, and doping
    Al Rifai, MH
    Christophersen, H
    Ottow, S
    Carstensen, J
    Föll, H
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (02) : 627 - 635
  • [2] Permeated porous silicon suspended membrane as sub-ppm benzene sensor for air quality monitoring
    Angelucci, R
    Poggi, A
    Dori, L
    Tagliani, A
    Cardinali, GC
    Corticelli, F
    Marisaldi, M
    [J]. JOURNAL OF POROUS MATERIALS, 2000, 7 (1-3) : 197 - 200
  • [3] [Anonymous], ADV SOLID STATE PHYS
  • [4] [Anonymous], POROUS SILICON SCI T
  • [5] Deep diffusion doping of macroporous silicon
    Astrova, EV
    Voronkov, VB
    Grekhov, IV
    Nashchekin, AV
    Tkachencko, AG
    [J]. TECHNICAL PHYSICS LETTERS, 1999, 25 (12) : 958 - 961
  • [6] Bengtsson M, 2000, PHYS STATUS SOLIDI A, V182, P495, DOI 10.1002/1521-396X(200011)182:1<495::AID-PSSA495>3.0.CO
  • [7] 2-4
  • [8] BERGER MG, 1997, OPTOELECTRONICAL PRO, V5
  • [9] BERGMANN RB, 2000, PHYS BIOL, V56, P51
  • [10] Birner A., 1999, PHYS BL, V55, P27
12345678910