Thermal expansion and memory effect in the ferroelectric-semiconductor TlGaSe2

被引：14

作者：

Seyidov, MirHasan Yu. ^{[1
,2
]}

Suleymanov, Rauf A. ^{[1
,2
]}

Yakar, Emin ^{[1
]}

机构：

[1] Gebze Inst Technol, Dept Phys, TR-41400 Korcaeli, Turkey

[2] Natl Acad Sci, Inst Phys, AZ-1143 Baku, Azerbaijan

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 02期

关键词：

CRYSTALS; PHASE;

D O I：

10.1063/1.3182825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of thermal annealing within the incommensurate phase (memory effect) on thermal expansion of ferroelectric-semiconductor crystal TlGaSe2 has been investigated. Strong transformation of linear expansion coefficients both in the layers plane and in the direction perpendicular to the layers has been observed for the first time as a result of annealing. It is supposed that internal electric fields (electret states) activated during the annealing greatly effect the dimension of the crystal via electrostriction. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3182825]

引用

页数：4

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