A 65nm CMOS Ka-band AGC Design

被引：0
|
作者：
Liu, Zhang-fa [1 ]
Wu, Jia-qian [1 ]
机构：
[1] Beijing Jiaotong Univ, Sch Elect & Informat Engn, Beijing 100044, Peoples R China
来源：
2ND INTERNATIONAL CONFERENCE ON MODELING, SIMULATION AND OPTIMIZATION TECHNOLOGIES AND APPLICATIONS (MSOTA 2018) | 2018年
关键词：
CMOS; Ka-band; AGC; VARIABLE-GAIN AMPLIFIER; LOW-VOLTAGE;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
A CMOS Ka-band AGC based on 65nm CMOS process is presented in this paper, the Chebyshev band-pass filter is used for filtering the input signal, the Gilbert structure with extended bandwidth technology is selected to for voltage gain amplifier, the current mirror structure composed of MOS tubes is employed for the voltage detector, and the control voltage generator circuit is designed based on the exponential relationship between the voltage and the current of the transistors. The simulation shows with the 1.0V supply voltage, the AGC working frequency range is between 27.5GHz and 31.3GHz, the input range of the automatic gain control circuit is between -20dB similar to 20dB, The overall layout area is around 1.15mm(2).
引用
收藏
页码：187 / 193
页数：7
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