Reaction-bonded silicon carbide refractories

被引：23

作者：

Reddy, NK ^{[1
]}

机构：

[1] Indian Inst Chem Technol, Mat Sci Sect, Hyderabad 500007, Andhra Pradesh, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2002年 / 76卷 / 01期

关键词：

silicon carbide refractories; modulus of rupture; reaction bonding;

D O I：

10.1016/S0254-0584(01)00502-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nitride-bonded silicon carbide (SNBSC) and aluminosilic ate-bonded silicon carbide (ASBSC) refractories have been prepared by reaction bonding. The percentage of silicon nitride or aluminosilicate in the refractory was varied from 15 to 25 wt.%. The modulus of rupture of the refractories increases with molybdenum disilicide (MOSi2) infiltration. These are resistant to molten zinc, lead, and aluminium, but are attacked by molten sodium sulphate. The thermal expansion coefficient of silicon carbide refractories varies from 3.1 X 10(-6) to 5.3 x 10(-6) C-1 for the temperature from room temperature to 1000 degreesC. (C) 2002 Published by Elsevier Science B.V.

引用

页码：78 / 81

页数：4