Drift velocity of electrons in quantum wells in high electric fields

被引：11

作者：

Mokerov, V. G. ^{[1
]}

Vasil'evskii, I. S. ^{[1
]}

Galiev, G. B. ^{[1
]}

Pozela, J. ^{[2
]}

Pozela, K. ^{[2
]}

Suziedelis, A. ^{[2
]}

Juciene, V. ^{[2
]}

Paskevic, C. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia

[2] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

SEMICONDUCTORS | 2009年 / 43卷 / 04期

关键词：

TRANSPORT-PROPERTIES; GAAS;

D O I：

10.1134/S1063782609040095

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is experimentally found that the maximum drift velocity of electrons in quantum wells of differently arranged AlGaAs/GaAs heterostructures and pseudoamorphous Al0.36Ga0.64As/In0.15Ga0.85 As heterostructures is higher than the maximum drift velocity of electrons in bulk materials. It is established that no negative differential conductivity is exhibited by the field dependence of the drift velocity of two-dimensional electrons in GaAs and In0.15Ga0.85As. The drift velocity in the GaAs quantum well is saturated in fields several times higher than the field corresponding to the I"-L intervalley transitions of electrons in bulk GaAs.

引用

页码：458 / 462

页数：5

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