Effects of indium-filling and synthesis pressure on the thermoelectric properties of CoSb3

被引：7

作者：

Deng, Le ^{[1
]}

Wang, Li Bin ^{[1
]}

Qin, Jie Ming ^{[1
]}

Zheng, Tao ^{[1
]}

Jia, Xiao Peng ^{[2
]}

Ma, Hong An ^{[2
]}

机构：

[1] Changchun Univ Sci & Technol, Dept Mat Sci & Engn, Changchun 130022, Peoples R China

[2] Jinlin Univ, Natl Lab Superhard Mat, Changchun 130012, Peoples R China

来源：

MODERN PHYSICS LETTERS B | 2014年 / 28卷 / 15期

基金：

美国国家科学基金会; 中国博士后科学基金;

关键词：

Skutterudite; thermoelectric properties; CoSb3; FILLED SKUTTERUDITE ANTIMONIDES; PERFORMANCE; TRANSPORT; FILMS; HPHT;

D O I：

10.1142/S0217984914501188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxCo4Sb12 skutterudite compounds have been prepared successfully at different synthesis pressures by high pressure and high temperature (HPHT) method, the processing time has been reduced from a few days to half an hour. In addition, the effect of synthesis pressure on the thermoelectric properties of In0.4Co4Sb12 compounds has been investigated in this paper. The structure of In0.4Co4Sb12 samples was evaluated by means of X-ray diffraction and scanning electron microscopy (SEM). The Seebeck coefficient, electrical resistivity and thermal conductivity were all measured in the temperature range of room temperature to 673 K. The sample synthesized at 2.0 GPa showed the highest power factor of 29.3 mu Wcm(-1)K(-2) at 373 K. A dimensionless thermoelectric figure of merit (ZT) of 0.51 at 673 K was achieved for n-type In0.4Co4Sb12 prepared at 1.3 GPa, which was significantly enhanced in comparison with pure CoSb3.

引用

页数：8

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