Fabrication parameters for optimized thermoelectric Mg2Si

被引:33
作者
de Boor, J. [1 ]
Compere, C. [1 ]
Dasgupta, T. [1 ]
Stiewe, C. [1 ]
Kolb, H. [1 ]
Schmitz, A. [1 ]
Mueller, E. [1 ,2 ]
机构
[1] German Aerosp Ctr, Inst Mat Res, D-51147 Cologne, Germany
[2] Univ Giessen, Inst Inorgan & Analyt Chem, D-35392 Giessen, Germany
关键词
THERMAL-CONDUCTIVITY; TEMPERATURE;
D O I
10.1007/s10853-014-8023-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Here, we report on the effect of sintering temperature, particle size, and sintering pressure on the thermoelectric properties of Sb-doped Mg2Si samples. We find a strong dependence of thermoelectric performance on sintering temperature with the best properties achieved at 900 A degrees C. We furthermore show a strong influence of the particle size of the employed powder, with coarser powder giving better properties. The difference stems mainly from the electrical conductivity; Seebeck coefficient and thermal conductivity are affected to a lesser extent. With respect to sintering pressure, a small positive influence of increasing pressure is found. We obtain a peak thermoelectric figure of merit of 0.75 +/- A 0.18 at 820 K employing optimized fabrication parameters.
引用
收藏
页码:3196 / 3204
页数:9
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