Nonlinear optical spectroscopy of suboxides at oxidized Si(111) interfaces

被引：26
作者：
Bergfeld, S
Braunschweig, B
Daum, W [1 ]
机构：
[1] Forschungszentrum Julich, Inst Schichten & Grenzflachen ISG 3, D-52428 Julich, Germany
[2] Tech Univ Clausthal, Inst Phys & Phys Technol, D-38678 Clausthal Zellerfeld, Germany
[3] JET Lasersyst GmbH, D-41836 Huckelhoven, Germany
来源：
PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 09期
关键词：
D O I：
10.1103/PhysRevLett.93.097402
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Native oxidation of the Si(111)(1x1)H surface causes the appearance and disappearance of second-harmonic generation (SHG) resonances related to specific bonding configurations of Si atoms at the interface. Resonances at 3.52 eV two-photon energy observed in p-polarized SHG spectra are indicative of a Si suboxide configuration present in a partially oxidized Si surface bilayer. Similar resonances are observed in spectra of thermally oxidized Si(111) and point to Si2+ suboxide states at the buried interface.
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页码：097402 / 1
页数：4
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