Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures

被引：4

作者：

Choi, Bum Ho ^{[1
]}

Lee, Jong Ho ^{[1
]}

机构：

[1] Korea Inst Ind Technol, Natl Ctr Nanoproc & Equipment, Kwangju 500480, South Korea

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 05期

关键词：

ATOMIC LAYER DEPOSITION; LIGHT-EMITTING DEVICES; GAS-DIFFUSION BARRIERS; THIN-FILM ENCAPSULATION; SILICON-NITRIDE FILMS; SINX FILMS; POLYMERS; AL2O3; COATINGS; LIFETIME;

D O I：

10.1063/1.4892354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the water vapor permeation barrier properties of 30-nm-thick SiN/SiCN/SiN nanolaminated multilayer structures grown by plasma enhanced chemical vapor deposition at 7 mTorr. The derived water vapor transmission rate was 1.12 x 10(-6) g/(m(2) day) at 85 degrees C and 85% relative humidity, and this value was maintained up to 15 000 h of aging time. The X-ray diffraction patterns revealed that the nanolaminated film was composed of an amorphous phase. A mixed phase was observed upon performing high resolution transmission electron microscope analysis, which indicated that a thermodynamically stable structure was formed. It was revealed amorphous SiN/SiCN/SiN multilayer structures that are free from intermixed interface defects effectively block water vapor permeation into active layer. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 29 条

[1] Gas permeation and lifetime tests on polymer-based barrier coatings [J].

Burrows, PE ;

Graff, GL ;

Gross, ME ;

Martin, PM ;

Hall, M ;

Mast, E ;

Bonham, C ;

Bennett, W ;

Michalski, L ;

Weaver, M ;

Brown, JJ ;

Fogarty, D ;

Sapochak, LS .

ORGANIC LIGHT-EMITTING MATERIALS AND DEVICES IV, 2000, 4105 :75-83

[2] RELIABILITY AND DEGRADATION OF ORGANIC LIGHT-EMITTING DEVICES [J].

BURROWS, PE ;

BULOVIC, V ;

FORREST, SR ;

SAPOCHAK, LS ;

MCCARTY, DM ;

THOMPSON, ME .

APPLIED PHYSICS LETTERS, 1994, 65 (23) :2922-2924

[3] Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition [J].

Carcia, P. F. ;

McLean, R. S. ;

Groner, M. D. ;

Dameron, A. A. ;

George, S. M. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)

[4] The low-temperature a-SiNx films with high impermeability and high optical gap with application to organic light-emitting diode -: art. no. 084501 [J].

Chang, HY ;

Meng, CY ;

Huang, CW ;

Lee, SC .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (08)

[5] Development of high barrier films on flexible polymer substrates [J].

Charton, C ;

Schiller, N ;

Fahland, M ;

Holländer, A ;

Wedel, A ;

Noller, K .

THIN SOLID FILMS, 2006, 502 (1-2) :99-103

[6] Thin film encapsulated flexible organic electroluminescent displays [J].

Chwang, AB ;

Rothman, MA ;

Mao, SY ;

Hewitt, RH ;

Weaver, MS ;

Silvernail, JA ;

Rajan, K ;

Hack, M ;

Brown, JJ ;

Chu, X ;

Moro, L ;

Krajewski, T ;

Rutherford, N .

APPLIED PHYSICS LETTERS, 2003, 83 (03) :413-415

[7] Gas diffusion barriers on polymers using multilayers fabricated by Al2O3 and rapid SiO2 atomic layer deposition [J].

Dameron, Arrelaine A. ;

Davidson, Stephen D. ;

Burton, Beau B. ;

Carcia, Peter F. ;

McLean, R. Scott ;

George, Steven M. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (12) :4573-4580

[8] Facile Encapsulation of Oxide based Thin Film Transistors by Atomic Layer Deposition based on Ozone [J].

Fakhri, Morteza ;

Babin, Nikolai ;

Behrendt, Andreas ;

Jakob, Timo ;

Goerrn, Patrick ;

Riedl, Thomas .

ADVANCED MATERIALS, 2013, 25 (20) :2821-2825

[9] Thin-film encapsulation of organic light-emitting devices [J].

Ghosh, AP ;

Gerenser, LJ ;

Jarman, CM ;

Fornalik, JE .

APPLIED PHYSICS LETTERS, 2005, 86 (22) :1-3

[10] Mechanisms of vapor permeation through multilayer barrier films: Lag time versus equilibrium permeation [J].

Graff, GL ;

Williford, RE ;

Burrows, PE .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (04) :1840-1849

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