Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two-Dimensional and Oxide/Two-Dimensional Transition Metal Dichalcogenide Diodes

Among many of 2D semiconductor-based devices, type III PN junction diodes are given special attentions due to their unique function, negative differential resistance (NDR). However, it has been found uneasy to achieve well-matched type III PN junctions from 2D-2D van der Waals heterojunctions. Here, the authors present other alternatives of type III heterojunctions, using 2D p-MoTe2/organic n-type dipyrazino[2,3-f:2 ',3 '-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) and 2D p-WSe2/n-MoOx systems. Those junction diodes appear to well-demonstrate static and dynamic NDR behavior via resonant tunneling and electron-hole recombination. Extended to an inverter circuit, p-MoTe2/n-HAT-CN diode enables multilevel inverter characteristics as monolithically integrated with p-MoTe2 channel field effect transistor. The same NDR diode shows dynamic LC oscillation behavior under a constant DC voltage, connected to an external inductor. From p-WSe2/n-MoOx oxide diode, similar NDR behavior to those of p-MoTe2/n-HAT-CN is again observed along with LC oscillations. The authors attribute these visible oscillation results to high peak-to-valley current ratios of their organic or oxide/2D heterojunction diodes.