Measurement of MOSFET C-V Curve Variation Using CBCM Method

被引：7

作者：

Tsuji, Katsuhiro ^{[1
]}

Terada, Kazuo ^{[1
]}

Nakamoto, Tomoaki ^{[1
]}

Tsunomura, Takaaki ^{[2
]}

Nishida, Akio ^{[2
]}

机构：

[1] Hiroshima City Univ, Grad Sch Informat Sci, Asa Minami Ku, 3-4-1 Ozuka Higashi, Hiroshima 7313194, Japan

[2] MIRAI Selete, Tsukuba, Ibaraki 3058569, Japan

来源：

ICMTS 2009: 2009 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 2009年

关键词：

D O I：

10.1109/ICMTS.2009.4814615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The test circuit, in which the cells including CBCMs (Charge-Based Capacitance Measurements) are arrayed in matrix shape, is developed to measure MOSFET capacitance variation. By adjusting the bias condition of the test circuit, it is able to obtain C-V curves for many MOSFETs. Additionally, a variation of threshold voltage is extracted from the estimated C-V curve variation. The obtained threshold voltage variations are close to those which are obtained from current-voltage characteristics.

引用

页码：81 / +

页数：2

共 7 条

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