Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices -: Part I:: Theory

被引：34
作者：
Jungemann, C [1 ]
Neinhüs, B [1 ]
Meinerzhagen, B [1 ]
机构：
[1] Univ Bremen, D-28334 Bremen, Germany
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 07期
关键词：
device simulation; Monte Carlo; noise; silicon;
D O I：
10.1109/TED.2002.1013283
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Langevin-type two-dimensional (2-D) bipolar drift-diffusion (DD) and hydrodynamic (HD) noise models are presented for Si and SiGe devices, which are based on the new concept of modified Langevin forces, which ensure that the DD and HD models exactly reproduce the fluctuations of the full-band Monte Carlo (MC) model under homogeneous bulk conditions. All transport and noise parameters are generated by MC bulk simulations and stored in lookup tables, which must be built only once. As a consequence, the accuracy of the DD and HD models is improved without an increase in CPU time compared to models with analytical expressions for the parameters. Considering the full-band structure, a remarkably strong dependence of noise on crystal orientation is found.
引用
收藏
页码：1250 / 1257
页数：8
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