Synthesis, Characterization, and Electronic Structure of Single-Crystal SnS, Sn2S3, and SnS2

被引:425
作者
Burton, Lee A. [1 ]
Colombara, Diego [2 ]
Abellon, Ruben D. [3 ]
Grozema, Ferdinand C. [3 ]
Peter, Laurence M. [1 ]
Savenije, Tom J. [3 ]
Dennler, Gilles [4 ]
Walsh, Aron [1 ]
机构
[1] Univ Bath, Ctr Sustainable Chem Technol, Dept Chem, Bath BA2 7AY, Avon, England
[2] Univ Luxembourg, Lab Energy Mat, L-4422 Belvaux, Luxembourg
[3] Delft Univ Technol, Optoelect Mat Sect, Dept Chem Engn, Fac Sci Appl, NL-2628 BL Delft, Netherlands
[4] IMRA Europe SAS, Dept Energy & Environm, F-06904 Sophia Antipolis, France
基金
英国工程与自然科学研究理事会;
关键词
semiconductor; earth-abundant; photovoltaic; tin sulfide; workfunction; SULFIDE THIN-FILMS; SPRAY-PYROLYSIS DEPOSITION; CHEMICAL-VAPOR TRANSPORT; TIN SULFIDE; ELECTRICAL-PROPERTIES; CATHODIC ELECTRODEPOSITION; SUSTAINABLE PHOTOVOLTAICS; OPTICAL-PROPERTIES; DRIFT MOBILITY; SOLAR-CELLS;
D O I
10.1021/cm403046m
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Tin sulfide is being widely investigated as an earth-abundant light harvesting material, but recorded efficiencies for SnS fall far below theoretical limits. We describe the synthesis and characterization of the single-crystal tin sulfides (SnS, SnS2, and Sn2S3) through chemical vapor transport, and combine electronic structure calculations with time-resolved microwave conductivity measurements to shed light on the underlying electrical properties of each material. We show that the coexistence of the Sn(II) and Sn(IV) oxidation states would limit the performance of SnS in photovoltaic devices due to the valence band alignment of the respective phases and the "asymmetry" in the underlying point defect behavior. Furthermore, our results suggest that Sn2S3, in addition to SnS, is a candidate material for low-cost thin-film solar cells.
引用
收藏
页码:4908 / 4916
页数:9
相关论文
共 99 条
[1]  
Abou-Helal M., 2012, J AM SCI, V8, P61
[2]   INVESTIGATIONS ON SNS [J].
ALBERS, W ;
VINK, HJ ;
HAAS, C ;
WASSCHER, JD .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2220-&
[3]   SEMICONDUCTORS OF TYPE MEIIMEIVS3 [J].
ALPEN, UV ;
FENNER, J ;
GMELIN, E .
MATERIALS RESEARCH BULLETIN, 1975, 10 (03) :175-180
[4]   Spray pyrolysised tin disulphide thin film and characterisation [J].
Amalraj, L ;
Sanjeeviraja, C ;
Jayachandran, M .
JOURNAL OF CRYSTAL GROWTH, 2002, 234 (04) :683-689
[5]  
Anderson J. S., 1945, P R SOC A, V184, P873
[6]  
[Anonymous], 1998, HANDBOOK OF OPTICAL
[7]  
Atkins P., 2006, INORGANIC CHEMISTRY
[8]   Deposition of tin sulfide thin films from tin(IV) thiolate precursors [J].
Barone, G ;
Hibbert, TG ;
Mahon, MF ;
Molloy, KC ;
Price, LS ;
Parkin, IP ;
Hardy, AME ;
Field, MN .
JOURNAL OF MATERIALS CHEMISTRY, 2001, 11 (02) :464-468
[9]   Ab initio molecular simulations with numeric atom-centered orbitals [J].
Blum, Volker ;
Gehrke, Ralf ;
Hanke, Felix ;
Havu, Paula ;
Havu, Ville ;
Ren, Xinguo ;
Reuter, Karsten ;
Scheffler, Matthias .
COMPUTER PHYSICS COMMUNICATIONS, 2009, 180 (11) :2175-2196
[10]   BIS(TRIPHENYLTIN) CHALCOGENIDES AS CONVENIENT PRECURSORS TO PHASE-PURE BINARY SEMICONDUCTORS [J].
BOUDJOUK, P ;
SEIDLER, DJ ;
BAHR, SR ;
MCCARTHY, GJ .
CHEMISTRY OF MATERIALS, 1994, 6 (11) :2108-2112