Surface carrier transport in Y nanojunctions: Signatures of the geometric potential

被引：19
作者：
Cuoghi, Giampaolo [1 ,2 ]
Ferrari, Giulio [1 ,3 ]
Bertoni, Andrea [1 ]
机构：
[1] Natl Res Ctr Nanostruct & Biosyst Surfaces S3, CNR, INFM, I-41100 Modena, Italy
[2] Univ Modena & Reggio Emilia, Dipartimento Fis, I-41100 Modena, Italy
[3] Unita Ric Modena, CNISM, I-41100 Modena, Italy
来源：
PHYSICAL REVIEW B | 2009年 / 79卷 / 07期
关键词：
semiconductor materials; surface conductivity; two-dimensional electron gas; QUANTUM-MECHANICS; NANOTUBES;
D O I：
10.1103/PhysRevB.79.073410
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effective potential originated by the nonplanar geometry of a two-dimensional electron gas (2DEG) modifies its coherent transport properties. To date no direct evidence of such purely geometric potential has been revealed. Here we expose its effects by computing the transmission characteristics of a semiconductor cylindrical 2DEG forming a Y junction. For some cylinder radii, we find that the activation thresholds of the transmission channels in the two drain leads are exchanged, with this effect being robust against the geometrical details of the three-terminal junction.
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页数：4
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