IHP SiGe:C BiCMOS Technologies as a Suitable Backup Solution for the ATLAS Upgrade Front-End Electronics

被引：17

作者：

Diez, Sergio ^{[1
]}

Lozano, Manuel ^{[1
]}

Pellegrini, Giulio ^{[1
]}

Mandic, Igor ^{[2
]}

Knoll, Dieter ^{[3
]}

Heinemann, Bernd ^{[3
]}

Ullan, Miguel ^{[1
]}

机构：

[1] CSIC, CNM, IMB, Barcelona 08193, Spain

[2] Jozef Stefan Inst, Ljubljana, Slovenia

[3] Innovat High Performance Microelect IHP, D-15236 Frankfurt, Oder, Germany

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2009年 / 56卷 / 04期

关键词：

Bipolar transistors; displacement damage; hardness assurance; ionization damage; radiation effects; SiGe; BIPOLAR-TRANSISTORS; HBT TECHNOLOGIES; IRRADIATION; DEVICES; DAMAGE;

D O I：

10.1109/TNS.2009.2021835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study we present the results of radiation hardness studies performed on three different SiGe: C BiCMOS technologies from Innovation for High Performance Microelectronics (IHP) for their application in the Super-Large Hadron Collider (S-LHC). We performed gamma, neutron and proton irradiations on the bipolar section of these technologies, in order to consider ionization and atomic displacement damage on electronic devices. Results show that transistors from the IHP BiCMOS technologies remain functional after the radiation levels expected in the inner detector (ID) of the ATLAS Upgrade experiment. These technologies are one of the candidates to constitute the analog part of the Front-End chip in the ATLAS-upgrade experiment, in the S-LHC.

引用

页码：2449 / 2456

页数：8

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