Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regions

In this work, the effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs are evaluated by an analytical method, and a global continuous channel potential solution, valid for a wide range of doping concentrations, is obtained by a single-piece potential equation with a good initial guess from the analysis. Extensive numerical simulations are performed to verify the proposed results. The study shows that the geometric parameter dependences of the threshold voltage in the doped transistors are ultimately different from that in the intrinsic ones, and the behavior of the channel center potential is also largely dependent on the body doping concentration. Moreover, the proposed channel potential solution is demonstrated to be not only accurate and continuous in the whole operation regime, but also valid for various doping concentrations and geometrical sizes of DG MOSFETs, without employing any fitting parameter.